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| SKM 300GB063D Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANS(R) 3 Superfast IGBT Modules SKM 300GB063D SKM 300GAR063D SKM 300GAL063D Freewheeling Diode Inverse Diode Features Module Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications GB GAL GAR 1 03-12-2008 NOS (c) by SEMIKRON SKM 300GB063D Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITRANS(R) 3 Superfast IGBT Modules SKM 300GB063D SKM 300GAR063D SKM 300GAL063D Freewheeling Diode Features Module This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Typical Applications GB GAL GAR 2 03-12-2008 NOS (c) by SEMIKRON SKM 300GB063D Zth Symbol Zth(j-c)l Conditions Values Units SEMITRANS(R) 3 Zth(j-c)D Superfast IGBT Modules SKM 300GB063D SKM 300GAR063D SKM 300GAL063D Features Typical Applications GB GAL GAR 3 03-12-2008 NOS (c) by SEMIKRON SKM 300GB063D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 03-12-2008 NOS (c) by SEMIKRON SKM 300GB063D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 10 CAL diode forward characteristic, inclusive RCC'+ EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge 5 03-12-2008 NOS (c) by SEMIKRON SKM 300GB063D UL Recognized File no. E 63 532 6 03-12-2008 NOS (c) by SEMIKRON |
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